APT40GP90JDQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

20
15
V_GE = 15V
10
5
V_CE = 600V
T_J = 25°C or 125°C
R_G = 4.3Ω
L = 100µH
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
70
R_G = 4.3Ω, L = 100µH, V_CE = 600V
60
50
40
30
20
10
T_J = 25 or 125°C,V_GE = 15V
00
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
6000
5000
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
4000
3000
T_J = 125°C
2000
1000
T_J = 25°C
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
7000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2,80A
6000
5000
4000
3000
E_off,80A
E_on2,40A
2000
E_off,40A
E_on2,20A
1000
0
E_off,20A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT40GP90JDQ2
140
120
100
V_GE =15V,T_J=125°C
80
V_GE =15V,T_J=25°C
60
40
20 ^VCE ^{= 600V}
R_G = 4.3Ω
L = 100µH
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120 _{RG = 4.3Ω, L = 100µH, VCE = 600V}
100 ^{TJ = 125°C, VGE = 15V}
80
60
40
T_J = 25°C, V_GE = 15V
20
00
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
3500
3000
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
2500
2000
T_J = 125°C
1500
1000
500
T_J = 25°C
00
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
5000
V_CE = 600V
V_GE = +15V
R_G = 4.3Ω
4000 ^Eon2,80A
3000
E_off,80A
2000
E_on2,40A
E_off,40A
1000
E_on2,20A
0
E_off,20A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature