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| APT40GP90JDQ2 Datasheet, PDF (1/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT | |||
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TYPICAL PERFORMANCE CURVES
®
APT94000GVP90JDQ2
APT40GP90JDQ2
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
⢠Low Conduction Loss
⢠Low Gate Charge
⢠Ultrafast Tail Current shutoff
⢠SSOA Rated
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT40GP90JDQ2
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
900
±30
64
27
160
160A @ 900V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
900
3
4.5
6
Volts
3.2 3.9
2.7
350
µA
1500
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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