APT25GP120BDQ1 Datasheet, PDF (7/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT25GP120BDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT25GP120BDQ1(G) UNIT
I_F(AV) _{Maximum Average Forward Current (TC = 127°C, Duty Cycle = 0.5)}
I_F(RMS) _{RMS Forward Current (Square wave, 50% duty)}
I_FSM Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
STATIC ELECTRICAL CHARACTERISTICS
15
29
Amps
110
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V_F
Forward Voltage
I_F = 25A
I_F = 50A
I_F = 25A, T_J = 125°C
3.24
4.03
2.91
Volts
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
t_rr
Reverse Recovery Time I_F = 1A, di_F/dt = -100A/µs, V_R = 30V, T_J = 25°C
-
21
ns
t_rr
Reverse Recovery Time
-
240
Q_rr
I_RRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
I_F = 15A, di_F/dt = -200A/µs
V_R = 800V, T_C = 25°C
-
260
nC
-
3
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
290
ns
I_F = 15A, di_F/dt = -200A/µs
V_R = 800V, T_C = 125°C
-
960
nC
-
6
-
Amps
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
-
130
I_F = 15A, di_F/dt = -1000A/µs
V_R = 800V, T_C = 125°C
-
1340
-
19
ns
nC
Amps
1.20
D = 0.9
1.00
0.7
0.80
0.60
0.5
Note:
0.40
0.3
t1
t2
0.20
0.1
SINGLE PULSE
Duty Factor D = ^t1/t2
0.05
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp. (°C)
0.676
0.00147
Power
(watts)
0.504
0.0440
Case temperature. (°C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL