APT25GP120BDQ1 Datasheet, PDF (4/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

16
14
V_GE = 15V
12
10
8
6
4
V_CE = 600V
2
T_J = 25°C, T_J =125°C
R_G = 5Ω
L = 100µH
0
10 15 20 25 30 35 40 45 50 55
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
35
R_G = 5Ω, L = 100µH, V_CE = 600V
30
25
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
0 _{10 15 20 25 30 35 40 45 50 55}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3500
3000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
2500
T_J = 125°C,V_GE =15V
2000
1500
1000
500
T_J = 25°C,V_GE =15V
0
10 15 20 25 30 35 40 45 50 55
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
4500
4000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2,50A
3500
3000
E_off,50A
2500
2000
E_on2,25A
1500
1000
E_off,25A
E_on2,12.5A
500
E_off,12.5A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT25GP120BDQ1(G)
140
120
100
V_GE =15V,T_J=125°C
80
60
40
V_GE =15V,T_J=25°C
20 ^VCE ^{= 600V}
R_G = 5Ω
L = 100 µH
0
10 15 20 25 30 35 40 45 50 55
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
R_G = 5Ω, L = 100µH, V_CE = 600V
100
T_J = 125°C, V_GE = 15V
80
60
40
T_J = 25°C, V_GE = 15V
20
010 _{15 20 25 30 35 40 45 50 55}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2500
2000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
T_J = 125°C, V_GE = 15V
1500
1000
500
T_J = 25°C, V_GE = 15V
010 _{15 20 25 30 35 40 45 50 55}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
3500
3000
V_CE = 600V
V_GE = +15V
R_G = 5Ω
E_on2,50A
2500
2000
1500
E_off,50A
E_on2,25A
1000
E_off,25A
E_on2,12.5A
500
E_off,12.5A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature