APT25GP120BDQ1 Datasheet, PDF (3/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
60
50
40
30
T_J = 25°C
20
T_J = 125°C
10
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
100
250µs PULSE
TEST<0.5 % DUTY
CYCLE
80
60
T_J = -55°C
40
T_J = 25°C
20
T_J = 125°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5.0
4.5
I_C = 50A
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
4.0
3.5
I_C = 25A
3.0
2.5
I_C = 12.5A
2.0
1.5
1.0
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.06
1.02
0.98
0.94
0.90
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT25GP120BDQ1(G)
60
50
40
30
T_J = 25°C
20
T_J = 125°C
10
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 25A
14 ^{TJ = 25°C}
V_CE =240V
12
V_CE =600V
10
8
V_CE = 480V
6
4
2
0
0
5.0
20 40 60 80 100 120
GATE CHARGE (nC)
FIGURE 4, Gate Charge
4.5
4.0
I_C = 50A
3.5
I_C = 25A
3.0
2.5
I_C = 12.5A
2.0
1.5
1.0
V_GE = 15V.
0.5 ^{250µs PULSE TEST}
<0.5 % DUTY CYCLE
0
-25 0
25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
100
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature