APT15GP90B Datasheet, PDF (6/6 Pages) Advanced Power Technology – The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.

V_CC
APT15DF100
I_C V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
APT15GP90B
10%
t_d(on)
t_r
5%
90%
10%
Switching Energy
Gate Voltage
T_J = 125°C
Drain Current
5%
DrainVoltage
Figure 22, Turn-on Switching Waveforms and Definitions
90%
t_d(off)
90%
GateVoltage _{TJ = 125°C}
DrainVoltage
Switching Energy
t_f
10%
0
Drain Current
V_TEST
*DRIVER SAME TYPE AS D.U.T.
A
100uH
A
DRIVER*
V_CE
I_C
V_CLAMP
B
D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, E_ON1 Test Circuit
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.