APT15GP90B Datasheet, PDF (5/6 Pages) Advanced Power Technology – The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.

TYPICAL PERFORMANCE CURVES
3,000
Cies
1,000
500
100
Coes
50
Cres
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT15GP90B
70
60
50
40
30
20
10
0
0
200 400 600 800 1000
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimum Switching Safe Operating Area
0.60
0.50
0.40
0.30
0.20
0.10
0
10^-5
0.9
0.7
0.5
Note:
0.3
t1
0.1
SINGLE PULSE
0.05
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Junction
temp (°C)
Power
(watts)
Case temperature(°C)
RC MODEL
0.222
0.278
0.00474F
0.125F
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
210
100
50
F_max = min(f_max1, f_{max 2} )
f _{max 1}
=
t _{d (on )}
0.05
+ t _r + t _{d(off )}
+
t_f
T_J = 125°C
10 TC = 75°C
D = 50 %
V_CE = 600V
5 ^{RG = 5 Ω}
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
P_diss
=
T_J − T_C
R _θJC
0
10
20
30
40
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current