APT15GP90B Datasheet, PDF (3/6 Pages) Advanced Power Technology – The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.

TYPICAL PERFORMANCE CURVES
60
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
40
30
T_C=25°C
20
T_C=125°C
10
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
100
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
60
40
TJ = -55°C
20
TJ = 25°C
0
TJ = 125°C
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
4
I_C =30A
I_C = 15A
3
I_C = 7.5A
2
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
50
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
40
APT15GP90B
30
T_C=125°C
20
T_C=25°C
10
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2,
16
Output
Characteristics (V_GE = 10V)
I_C = 15A
14 ^{TJ = 25°C}
V_CE = 180V
12
V_CE = 450V
10
8
V_CE = 720V
6
4
2
0
0
4
3.5
10 20 30 40 50 60 70
GATE CHARGE (nC)
FIGURE 4, Gate Charge
I_C =30A
3
I_C = 15A
2.5
I_C = 7.5A
2
1.5
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature