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APT13GP120K Datasheet, PDF (6/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT
VCC
APT15DF120
IC VCE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
APT13GP120K
10%
td(on)
tr
90%
Gate Voltage
TJ = 125°C
Drain Current
5% 10%
Switching Energy
DrainVoltage
5%
Figure 22, Turn-on Switching Waveforms and Definitions
90%
td(off)
90%
Gate Voltage TJ = 125°C
DrainVoltage
tf 10% 0
Switching Energy
Drain Current
VTEST
*DRIVER SAME TYPE AS D.U.T.
A
100uH
A
DRIVER*
VCE
IC
VCLAMP
B
D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
TO-220AC Package Outline
1.39 (.055)
0.51 (.020)
Collector
3.42 (.135)
16.51 (.650) 2.54 (.100)
14.23 (.560)
4.08 (.161) Dia.
3.54 (.139)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
0.50 (.020)
0.41 (.016)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
6.35 (.250)
MAX.
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Gate
Collector
Emitter
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.