APT13GP120K Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

14
12
V_GE = 15V
10
8
6
4
V_CE = 600V
2 ^TJ ^{= 25°C, T}J ^=125°C
R_G = 5Ω
L = 100 µH
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
R_G = 5Ω, L = 100µH, V_CE = 600V
25
20
15
10
T_J = 25 or 125°C,V_GE = 15V
5
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
V_CE = 600V
V_GE = +15V
R_G = 5 Ω
1000
T_J = 125°C,V_GE =15V
800
600
400
200
T_J = 25°C,V_GE =15V
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
1800
1600
E_off, 26A
E_on2, 26A
1400
1200
1000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_off, 13A
800
600
E_off, 6.5A
400
E_on2, 6.5A
200
E_on2, 13A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT13GP120K
120
100
80
V_GE =15V,T_J=125°C
60
40
20 _{VCE = 600V}
R_G = 5Ω
V_GE =15V,T_J=25°C
L = 100 µH
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
R_G = 5Ω, L = 100µH, V_CE = 600V
250
200
T_J = 125°C, V_GE = 10V or 15V
150
100
T_J = 25°C, V_GE = 10V or 15V
50
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1600
1400
1200
V_CE = 600V
V_GE = +15V
R_G = 5 Ω
T_J = 125°C, V_GE = 10V or 15V
1000
800
600
T_J = 25°C, V_GE = 10V or 15V
400
200
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
1400
V_CE = 600V
V_GE = +15V
R_G = 5 Ω
1200
1000 ^Eon2,26A
800
E_off,26A
600
E_on2,13A
E_off, 13A
400
E_on2,6.5A
200
0
E_off, 6.5A
25
50
75
100
125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature