APT13GP120K Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
40
VGE = 15V.
250µs PULSE TEST
35 <0.5 % DUTY CYCLE
30
25
T_C = -55°C
20
15
T_C = 125°C
10
5
T_C = 25°C
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V_GE = 15V)
40
250µs PULSE TEST
<0.5 % DUTY CYCLE
35
30
25
TJ = -55°C
20
TJ = 25°C
15
TJ = 125°C
10
5
0
01 2 3 4 5 6 7 8 9
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
5
I_C = 26A
4
I_C = 13A
3
I_C= 6.5A
2
1
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
40
VGE = 10V.
250µs PULSE TEST
35 <0.5 % DUTY CYCLE
30
T_C = -55°C
APT13GP120K
25
20
15
T_C = 125°C
10
T_C = 25°C
5
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 13A
14 ^{TJ = 25°C}
12
V_CE = 240V
V_CE = 600V
10
8
V_CE = 960V
6
4
2
0
0 10 20 30 40 50 60
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5
I_C = 26A
4
I_C = 13A
3
I_C= 6.5A
2
1
VGE = 15V.
250µs PULSE TEST
0 ^{<0.5 % DUTY CYCLE}
-55 -25 0 25 50 75 100 125
T_J, JUNCTION TRMPERATURE (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature