APT35GP120J Datasheet, PDF (5/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
100
50
Coes
Cres
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT35GP120J
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500 600 700 800 900 1000
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Reverse Bias Safe Operating Area
0.45
0.4
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10^-5
0.9
0.7
0.5
Note:
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
Junction
100
temp. ( ”C)
0.0966
0.00997F
50
Power
(Watts)
0.228
0.158F
Case temperature
0.116
1.958F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
F_max = min(f_max1, f_{max 2} )
10
T_J = 125°C
T_C = 75°C
D = 50 %
V_CE = 800V
R_G = 5 Ω
3
f _{max 1}
=
t _{d (on )}
0.05
+ t _r + t _{d(off )}
+
t_f
f_{max 2}
=
P_diss − P_cond
E_on2 + E_off
P_diss
=
T_J − T_C
R _θJC
10
20
30
40
50
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current