APT35GP120J Datasheet, PDF (3/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
80
VGE = 15V.
250µs PULSE TEST
70 <0.5 % DUTY CYCLE
60
50
40
T_C=25°C
30
T_C=125°C
20
10
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1,
120
Output
Characteristics(V_GE = 15V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
100
80
60
40
TJ = 25°C
TJ = 125°C
20
0
TJ = -55°C
0 1 2 3 4 5 6 7 8 9 10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I_C= 70A
4
I_C= 35A
3
I_C=17.5A
2
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
1.15
1.1
1.05
1.0
0.95
0.90
0.85
0.8
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
80
VGE = 10V.
250µs PULSE TEST
70 <0.5 % DUTY CYCLE
APT35GP120J
60
50
40
T_C=25°C
30
20
T_C=125°C
10
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V_GE = 10V)
16
I_C = 35A
14 ^{TJ = 25°C}
12
V_CE= 240V
10
V_CE= 600V
8
V_CE= 960V
6
4
2
0
0 20 40 60 80 100 120 140 160
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5
VGE = 15V.
4.5 ^{250µs PULSE TEST}
<0.5 % DUTY CYCLE
4
I_C=70A
3.5
I_C= 35A
3
2.5
2
I_C= 17.5A
1.5
1
0.5
0
0
25
50
75
100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature