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| APT35GP120J Datasheet, PDF (1/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT | |||
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APT35GP120J
1200V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
⢠Low Conduction Loss
⢠Low Gate Charge
⢠Ultrafast Tail Current shutoff
⢠50 kHz operation @ 800V, 14A
⢠20 kHz operation @ 800V, 25A
⢠RBSOA rated
ISOTOP®
"UL Recognized"
C
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT35GP120J
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
RBSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±20
±30
64
29
140
140A @ 960V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
1200
3
4.5
6
3.3 3.9
3
250
2500
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
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