ARF473 Datasheet, PDF (4/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

ARF473
81.36 MHz Test amplifier Po = 500W @130 V
C6
C7
J1 T1
C1
Vg1
R1
TL1
C2
TL2
C8
C9 ^R2
Vg2
DUT
L1
C5
TL3
C3 ^TL5
L2
L3
C10
T2
C4
TL4
TL6
+
130V
-
J2
C1 10-80 pF trimmer ARCO 462
C2-4 1000 pF NPO 500V chip
C5-C9 10 nF 500V chip
C10 .47 uF Ceramic 500V
L1 680 nH 12t #24 enam .312" dia
L2 55 nH 3t #18 enam .25" dia
L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2 uH
R1-2 100 Ω 0.5 W
T1 4:1 RF transformer on two beads same as L3.
T2 1:1 coax balun. Fair-Rite 2643665902 bead
on 1.5" RG-303 50 Ω teflon coax.
TL1-2 Printed line L=1.2" w=.23"
TL3-4 Printed line L=.25" w=.23"
TL5-6 Printed line L=0.25" w=.23"
0.23" wide stripline on FR-4 board is ~32Ω Zo
Peak Output Power vs... Vdd
900
1.2
800
Max
1
700
Duty Cycle
600
0.8
500
400 ^{Po Watts}
0.6
300
0.4
200
0.2
100
0
0
80
100 120 140 160
Drain Supply Voltage Vdd
Notes:
The value of L2 must be adjusted as the
supply voltage is changed to maintain
resonance in the output circuit. At 81 MHz its
value changes from approximately 50 nH at
100V to 70 nH at 165V.
The duty cycle past 100V must be reduced to
insure power dissipation is within the limits of
the device. Maximum pulse length should be
100mS or less. See figure 7.
1.100
.435
1
2
0.400
0.390
5
Pin 1. Drain
2. Drain
0.200
3
4
.065 rad 2 PL
3. Gate
4. Gate
.225
5. Source
.060
.005
.107
1.340
.210
Package Dimensions (inches)
HAZARDOUS MATERIAL
WARNING
The ceramic portion of the
device between leads and
mounting flange is beryllium
oxide. Beryllium oxide dust is
highly toxic when inhaled. Care
must be taken during handling
and mounting to avoid damage
to this area. These devices
must never be thrown away with
general industrial or domestic
waste.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.