ARF473 Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
ARF473
25
VGS=15 & 10V
20
9V
8V
15
6V
10
5.5V
5V
5
4.5V
4V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.4
0.1
0.05
0.01
0.005
0.001
10^-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
Freq. (MHz)
Zin (Ω)
Z_OL (Ω)
27.12
40.68
63.8
81.36
127.4
4.78 - j 14.3
1.96 - j 9
0.59 - j 4.1
0.31 - j 1.65
0.4 + j 2.66
49 - j 38.8
33.6 - j 39.5
18 - j 33.5
12.3 - j 29
5.5 - j 20.3
Zin - Gate shunted with 100Ω
I_DQ = 75 mA each side
Z_OL - Conjugate of optimum load for 300 Watts output at Vdd = 125V
Input and output impedances are measured from gate to gate and
drain to drain respectively