ARF473 Datasheet, PDF (2/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

DYNAMIC CHARACTERISTICS (per section)
Symbol Characteristic
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 50V
f = 1 MHz
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 1.6 Ω
ARF473
MIN TYP MAX UNIT
1200 1600
140 200
pF
9
12
5.1
10
4.1
8
ns
12.8 20
4.0
8
FUNCTIONAL CHARACTERISTICS (Push-Pull Configuration)
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
G_{PS Common Source Amplifier Power Gain}
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 5:1
f = 130MHz
I_dq = 150mA V_DD = 135V
P_out = 300W
13
14
dB
50
55
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.}
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
26
3000
Class AB
24
V_DD = 125V
22
P_out = 300W
1000
500
20
18
16
100
50
14
Ciss
Coss
12
10
0 25 50 75 100 125 150
FREQUENCY (MHz)
Figure 1, Typical Gain vs. Frequency
Crss
10
.1
.5 1
5 10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
12
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
10
@ <0.5 % DUTY CYCLE
TJ = -55°C
8
6
4
TJ = +25°C
2
TJ = +125°C
0
0
1
2
3
4
5
6
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
80
DATA FOR BOTH SIDES
IN PARALLEL
OPERATION HERE
LIMITED BY R_DS (ON)
100us
1ms
10
5
10ms
TC =+25°C
TJ =+200°C
SINGLE PULSE
1
1
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
100ms
DC