APT50GF60BR Datasheet, PDF (4/5 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.

4.0
3.5
3.0
I_C1
2.5
I_C2
2.0
0.5 I_C2
1.5
1.0-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 8, Typical V_CE(SAT) Voltage vs Junction Temperature
1.2
1.1
1.0
APT50GF60BR
80
60
40
20
0 ₂₅
50
75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
10
V_CC = 0.66 V_CES
V_GE = +15V
T_J = +25°C
8
I_C = I_C2
E_on
6
0.9
0.8
0.7-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
20
V_CC = 0.66 V_CES
V_GE = +15V
R_G = 10W
10
I_C1
5
I_C2
0.5 I_C2
1
4
E_off
2
00
20
40
60
80
100
R_G, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
2.5
V_CC = 0.66 V_CES
V_GE = +15V
T_J = +125°C
2.0
R_G = 10W.
E_off
1.5
1.0
E_on
0.5
0.5-50 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
100
10
00
10
20
30
40
50
I_C, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
For Both:
Duty Cycle = 50%
T_J = +125°C
T_sink = +90°C
Gate drive as specified
Power dissapation = 83W
I_LOAD = I_RMS of fundamental
1
0.1
1.0
10
100
F, FREQUENCY (KHz)
Figure 14, Typical Load Current vs Frequency
1000