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APT50GF60BR Datasheet, PDF (2/5 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
MIN
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.66VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.66VCES
IC = IC2
RG = 10W
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10W
TJ = +25°C
VCE = 20V, IC = IC2
6
APT50GF60BR
TYP MAX UNIT
2250
255
pF
155
175
18
nC
100
29
118
ns
150
190
28
75
ns
265
185
1.8
2.4
mJ
4.2
30
80
ns
240
43
3.6
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
RQJC
RQJA
Junction to Case
Junction to Ambient
WT
Package Weight
Torque Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 IC = IC2, RGE = 25W, L = 100µH, Tj = 25°C
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYP
0.22
6.1
MAX
0.42
40
10
1.1
UNIT
°C/W
oz
gm
lb•in
N•m