APT50GF60BR Datasheet, PDF (3/5 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.

APT50GF60BR
100
80
V_GE=13, 15 & 17V
11V
60
40
10V
20
9V
8V
0
0
4
8
12
16
20
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T_J = 25°C)
100
250µSec. Pulse Test
V_GE = 15V
80
T_C=-55°C
T_C=+25°C
60
T_C=+150°C
40
20
0
0
1
2
3
4
5
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
10,000
f = 1MHz
1,000
C_ies
C_oes
100
V_GE=13, 15 & 17V
80
11V
60
10V
40
9V
20
8V
7V
0
0
4
8
12
16
20
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T_J = 150°C)
150
100
10
OPERATION
HERE
LIMITED
BY
V_CE (SAT)
100µS
1mS
T_C =+25°C
T_J =+150°C
SINGLE PULSE
10mS
1
1
10
100
600
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Safe Operating Area
20
I_C = I_C2
T_J = +25°C
16
V_CE=120V
V_CE=300V
12
V_CE=480V
8
4
C_res
100
0.01
0.1
1.0
10
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
1.0
0.5
0
0
40
80 120 160 200
Q_g, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
0.02
t1
0.005
0.01
t2
Duty Factor D = ^t1/t2
SINGLE PULSE
Peak TJ = PDM x Z_θJC + TC
0.001 _10-5
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration