APT40GP60B2DQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

25
V_GE = 15V
20
15
10
5 ^VCE ^{= 400V}
T_J = 25°C, T_J =125°C
R_G = 5Ω
0 ^{L = 100 µH}
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
80
R_G = 5Ω, L = 100µH, V_CE = 400V
70
60
50
40
30
20
T_J = 25 or 125°C,V_GE = 15V
10
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3000
2500
V_CE = 400V
V_GE = +15V
R_G = 5Ω
2000
T_J = 125°C,V_GE =15V
1500
1000
500
0
T_J = 25°C,V_GE =15V
0
20
40
60
80
90
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
4000
3500
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_on2,80A
3000
2500
2000
E_off,80A
1500
1000
E_on2,40A
E_off,40A
500
E_on2,20A
0
E_off,20A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT40GP60B2DQ2(G)
100
80
V_GE =15V,T_J=125°C
60
V_GE =15V,T_J=25°C
40
20 _{VCE = 400V}
R_G = 5Ω
L = 100 µH
00
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100 _{RG = 5Ω, L = 100µH, VCE = 400V}
80
60 _{TJ = 125°C, VGE = 15V}
40
20
T_J = 25°C, V_GE = 15V
0
0
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2000
V_CE = 400V
V_GE = +15V
R_G = 5Ω
1500
T_J = 125°C, V_GE = 15V
1000
500
T_J = 25°C, V_GE = 15V
00
20
40
60
80
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
3000
2500
V_CE = 400V
V_GE = +15V
R_G = 5Ω
E_on2,80A
2000
1500 E_off,80A
1000
E_on2,40A
500 E_off,40A
E_on2,20A
0
E_off,20A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature