APT40GP60B2DQ2 Datasheet, PDF (1/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
®
APT4₆0G₀P₀6_V0B2DQ2(G)
APT40GP60B2DQ2
APT40GP60B2DQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7^® IGBT
The POWER MOS 7^® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 400V, 41A
• 200 kHz operation @ 400V, 26A
• SSOA Rated
T-Max^TM
GC
E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT40GP60B2DQ2(G) UNIT
V_CES
V_GE
I _C1
I _C2
I _CM
SSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current ⁷ @ T_C = 25°C
Continuous Collector Current @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 150°C
Switching Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
100
62
160
160A @ 600V
543
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V_(BR)CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I _C = 250µA)
Gate Threshold Voltage (V_CE = V_GE, I _C = 1mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 40A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 40A, T_j = 125°C)
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
MIN TYP MAX Units
600
3
4.5
6
Volts
2.2 2.7
2.1
500
µA
3000
±100 ^nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com