APT40GP60B2DQ2 Datasheet, PDF (3/9 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
80
70
60
50
40
T_J = -55°C
30
T_J = 25°C
20
T_J = 125°C
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
250
250µs PULSE
TEST<0.5 % DUTY
CYCLE
200
150
T_J = -55°C
100
T_J = 25°C
T_J = 125°C
50
0
0 1 2 3 4 5 6 7 8 9 10
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
T_J = 25°C.
250µs PULSE TEST
3.0
<0.5 % DUTY CYCLE
I_C = 80A
2.5
I_C = 40A
2.0
1.5 ^{IC = 20A}
1.0
0.5
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT40GP60B2DQ2(G)
80
70
60
50
40
T_J = -55°C
30
T_J = 25°C
20
10
T_J = 125°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 40A
14 ^{TJ = 25°C}
12
V_CE = 120V
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0
3.5
20 40 60 80 100 120 140
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3
I_C = 80A
2.5
2
1.5
I_C = 20A
I_C = 40A
1
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-55 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
180
160
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature