APT33GF120B2RDQ2 Datasheet, PDF (4/9 Pages) Advanced Power Technology – FAST IGBT & FRED

20
V_GE = 15V
15
10
5
V_CE = 800V
T_J = 25°C, or 125°C
R_G = 4.3Ω
L = 100µH
0
0 10 20 30 40 50 60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
70 _{RG = 4.3Ω, L = 100µH, VCE = 800V}
60
T_J = 25 or 125°C,V_GE = 15V
50
40
30
20
10
00
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
10,000
8,000
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
T_J = 125°C
6,000
4,000
2,000
T_J = 25°C
0
0 10 20 30 40 50 60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
18,000
16,000
V_CE = 800V
V_GE = +15V
T_J = 125°C
E_on2,50A
14,000
12,000
10,000
8,000
6,000
4,000
2,000
E_off,50A
E_off,25A
E_on2,25A
E_on2,12.5A
0
E_off,12.5A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT33GF120B2_LRDQ2(G)
250
200
150
V_GE =15V,T_J=125°C
V_GE =15V,T_J=25°C
100
50
V_CE = 800V
R_G = 4.3Ω
L = 100µH
0
0 10 20 30 40 50 60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
R_G = 4.3Ω, L = 100µH, V_CE = 800V
140
120
100
80
T_J = 25°C, V_GE = 15V
T_J = 125°C, V_GE = 15V
60
40
20
00
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
4,000
3,500
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
3,000
T_J = 125°C
2,500
2,000
1,500
1,000
T_J = 25°C
500
0
0 10 20 30 40 50 60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
9,000
8,000
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
7,000
6,000 ^E_on2,^50A
5,000
4,000
E_off,50A
3,000
2,000
1,000
E_on2,25A
E_off,25A
E_on2,12.5A
E_off,12.5A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature