APT33GF120B2RDQ2 Datasheet, PDF (3/9 Pages) Advanced Power Technology – FAST IGBT & FRED

TYPICAL PERFORMANCE CURVES
80
V_GE = 15V
70
T_J = 25°C
60
T_J = -55°C
50
40
T_J = 125°C
30
20
10
0
0
1
2
3
4
5
6
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
80
250µs PULSE
TEST<0.5 % DUTY
70
CYCLE
T_J = -55°C
60
50
40
30
T_J = 25°C
20
T_J = 125°C
10
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
T_J = 25°C.
250µs PULSE TEST
I_C = 50A
<0.5 % DUTY CYCLE
4
3
I_C = 25A
2
I_C = 12.5A
1
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT33GF120B2_LRDQ2(G)
100
15V
90
80
13V
70
60
12V
50
11V
40
30
10V
20
9V
10
8V
7V
0
0
5
10
15
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 25A
14 ^{TJ = 25°C}
V_CE = 240V
V_CE = 600V
12
10
8
V_CE = 960V
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5
4
I_C = 50A
3
I_C = 25A
2
I_C = 12.5A
1
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature