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| APT33GF120B2RDQ2 Datasheet, PDF (1/9 Pages) Advanced Power Technology – FAST IGBT & FRED | |||
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TYPICAL PERFORMANCE CURVES
®
1200V APT33GF120B2_LRDQ2(G)
APT33GF120B2RDQ2 APT33GF120LRDQ2
APT33GF120B2RDQ2G* APT33GF120LRDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
⢠Low Forward Voltage Drop
⢠High Freq. Switching to 20KHz
⢠RBSOA and SCSOA Rated
⢠Ultra Low Leakage Current
⢠Ultrafast Soft Recovery Anti-parallel Diode
(B2)
T-Max®
TO-264
(L)
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT33GF120B2_LRDQ2(G) UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
64
30
75
75A @ 1200V
357
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
1200
4.5 5.5 6.5
Volts
2.0 2.5 3.0
3.1
100
µA
6000
±120 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
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