APT31N60BCS Datasheet, PDF (4/5 Pages) Advanced Power Technology – Super Junction MOSFET

93
OPERATION HERE
50 ^{LIMITED BY RDS (ON)}
10
100µS
5
1
T_C =+25°C
T_J =+150°C
SINGLE PULSE
.1
1
10
100
600
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 18A
14
1mS
10mS
12
V_DS=120V
10
V_DS=300V
8
6
V_DS=480V
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
180
160
140
t_d(off)
120
100
80
V_DD = 400V
R_G = 4.3Ω
T_J = 125°C
L = 100µH
60
40
20
t_d(on)
0
0
5
10 15 20 25 30
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
500
400
V_DD = 400V
R_G = 4.3Ω
T_J = 125°C
L = 100µH
E_on includes
diode reverse recovery.
300
E_on
200
E_off
100
0
0
5
10 15 20 25 30
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
APT31N60B_SCS(G)
20⁴
10⁴
C_iss
10³
10²
C_oss
10¹
C_rss
10⁰
0
50
100
150
200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
T_J =+150°C
T_J =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
45
40
35
30
25
V_DD = 400V
20 _{RG = 4.3Ω}
15
T_J = 125°C
L = 100µH
10
t_f
t_r
5
0
0
5
10 15 20 25 30
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
400
350
E_off
300
250
200
150
E_on
V_DD = 400V
100
I_D = 18A
T_J = 125°C
50
L = 100µH
E_on includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE