APT31N60BCS Datasheet, PDF (2/5 Pages) Advanced Power Technology – Super Junction MOSFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ⁵
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
t_f
Fall Time
E_on
Turn-on Switching Energy ⁶
E_off
Turn-off Switching Energy
E_on
Turn-on Switching Energy ⁶
E_off
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 400V
I_D = 18A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 400V
I_D = 18A @ 25°C
R_G = 3.3Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 400V, V_GS = 15V
I_D = 18A, R_G = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 400V, V_GS = 15V
I_D = 18A, R_G = 4.3Ω
MIN
APT31N60B_SCS(G)
TYP MAX UNIT
3055
3260
pF
28
65
85
14
nC
22
10
5
ns
110
5
290
125
µJ
170
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD
Diode Forward Voltage ⁴ (V_GS = 0V, I_S = -18A)
t _rr
Reverse Recovery Time (I_S = -18A, dl_S/dt = 100A/µs)
Q _rr
Reverse Recovery Charge (I_S = -18A, dl_S/dt = 100A/µs)
dv_/dt
Peak Diode Recovery ^dv/_dt ⁷
18
Amps
93
1.2 Volts
450
ns
12
µC
4
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.5
62 ^°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as P_AV = E_AR*f
3 Starting T_j = +25°C, L = 33.23mH, R_G = 25Ω, Peak I_L = 11A
4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.60
0.50
D = 0.9
0.40
0.7
0.30
0.5
Note:
0.20
t1
0.3
t2
0.10
0.1
0
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION