APT31N60BCS Datasheet, PDF (3/5 Pages) Advanced Power Technology – Super Junction MOSFET

Typical Performance Curves
Junction
temp. (°C)
Power
(watts)
Case temperature. (°C)
RC MODEL
0.283
0.216
0.00355
0.727
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
90
80
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
70
60
50
40
30
T_J = -55°C
20
T_J = +25°C
10
T_J = +125°C
0
01 2 3 4 5 6 78
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
35
30
25
20
15
10
5
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 18A
V_GS = 10V
2.0
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APT31N60B_SCS(G)
100
15 & 10V
90
6.5V
80
70
60
6V
50
40
5.5V
30
20
5V
10
4.5V
0
0
5
10
15
20
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
1.30
V_GS = 10V @ 18A
1.20
1.10
1.00
0.90
V_GS=10V
V_GS=20V
0.80
0
10
20
30
40
50
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE