APT26GU30B Datasheet, PDF (4/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

14
12
V_GE= 15V
10
8
6
4
V_CE = 400V
2 ^{TJ = 25°C, TJ =125°C}
R_G = 20Ω
L = 100 µH
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
25
20
15
T_J = 25 or 125°C,V_GE = 15V
10
5
0 ^{RG = 20Ω, L = 100µH, VCE = 200V}
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
250
200
V_CE = 200V
V_GE = +15V
R_G = 20Ω
T_J = 125°C,V_GE =15V
150
100
50
T_J = 25°C,V_GE =15V
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
300
250
V_CE = 200V
V_GE = +15V
T_J = 125°C
E_off, 26A
200
E_on2, 26A
150
E_off, 13A
100
50
E_on2, 13A
E_off, 6.5A
E_on2, 6.5A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT26GU30B
80
V_GE =15V,T_J=125°C
70
60
V_GE =15V,T_J=25°C
50
40
30
20
V_CE = 200V
10 ^RG ^{= 20Ω}
L = 100 µH
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
R_G = 20Ω, L = 100µH, V_CE = 200V
100
80
T_J = 125°C, V_GE = 15V
60
40
T_J = 25°C, V_GE = 15V
20
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
250
200
V_CE = 200V
V_GE = +15V
R_G = 20Ω
T_J = 125°C, V_GE = 15V
150
100
50
T_J = 25°C, V_GE = 15V
0
5
10
15
20
25
30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
250
V_CE = 200V
V_GE = +15V
R_G = 20Ω
200
E_off,26A
150
E_on2,26A
100
E_off, 13A
50
E_on2,13A
E_off, 6.5A
E_on2,6.5A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature