APT26GU30B Datasheet, PDF (1/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT26GU^APT3^26G0^U3B^0B
300V
POWER MOS 7^® IGBT
The POWER MOS 7^® IGBT is a new generation of high voltage power IGBTs.
TO-247
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• SSOA rated
G
C
E
C
• Low Gate Charge
• Ultrafast Tail Current shutoff
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT26GU30B
UNIT
V_CES
V_GE
V_GEM
I_C1
I_C2
I_CM
SSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 100°C
Pulsed Collector Current ¹ @ T_C = 150°C
Switching Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
±20
±30
47
26
85
85A @ 300V
187
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I _C = 250µA)
Gate Threshold Voltage (V_CE = V_GE, I _C = 1mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 13A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 13A, T_j = 125°C)
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
MIN TYP MAX UNIT
300
3
4.5
6
Volts
1.5 2.0
1.5
250
µA
2500
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com