APT20M36BLL_04 Datasheet, PDF (4/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

260
100
OPERATION HERE
LIMITED BY R_DS (ON)
50
100µS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
5 10
50 100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 65A
14
VDS=40V
12
VDS=100V
10
VDS=160V
8
1mS
10mS
6
4
2
0
0 50 100 150 200 250 300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
45
40
t_d(off)
35
30 ^VDD ^{= 133V}
R_G = 5Ω
25 _{TJ = 125°C}
20 ^{L = 100µH}
15
t_d(on)
10
5
0
30 40 50 60 70 80 90 100
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
1200
1000
800
V_DD = 133V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
600
E_on
400
200
E_off
0
30 40 50 60 70 80 90 100
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
5,000
1,000
500
APT20M36BLL_SLL
Ciss
Coss
100
Crss
50
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
100
V_DD = 133V
R_G = 5Ω
T_J = 125°C
L = 100µH
80
t_f
60
t_r
40
20
0
30 40 50 60 70 80 90 100
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
800
E_on
600
E_off
400
V_DD = 133V
I_D = 65A
200
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE