APT20M36BLL_04 Datasheet, PDF (3/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

Typical Performance Curves
Junction
temp. (°C)
RC MODEL
0.0329
0.00334F
Power
(watts)
0.158
0.00802F
Case temperature. (°C)
0.189
0.165F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
140
120
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
80
60
40
TJ = +25°C
20
TJ = +125°C
TJ = -55°C
0
0
2
4
6
8
10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
70
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 32.5A
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
200
VGS=15V
160
120
APT20M36BLL_SLL
10V
9V
80
8V
7.5V
40
7V
6.5V
6V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
NORMALIZED TO
V_GS = 10V @ I_D = 32.5A
1.3
1.2
1.1
VGS=10V
1.0
0.9
VGS=20V
0.8
0
1.15
20
40
60
80
100
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE