APT20M36BLL_04 Datasheet, PDF (2/5 Pages) Advanced Power Technology – POWER MOS 7 MOSFET

DYNAMIC CHARACTERISTICS
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 100V
I_D = 65A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 100V
I_D = 65A @ 25°C
R_G = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 133V, V_GS = 15V
I_D = 65A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 133V V_GS = 15V
I_D = 65A, R_G = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -65A)
t _rr
Reverse Recovery Time (I_S = -65A, dl_S/dt = 100A/µs)
Q _rr Reverse Recovery Charge (I_S = -65A, dl_S/dt = 100A/µs)
dv_{/dt Peak Diode Recovery} dv_/dt 6
APT20M36BLL_SLL
MIN TYP MAX UNIT
3080
990
pF
70
60
24
nC
26
9
37
ns
16
30
490
300
µJ
600
315
MIN TYP MAX UNIT
65
Amps
260
1.3 Volts
280
ns
3.5
µC
5
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.38
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 0.62mH, R_G = 25Ω, Peak I_L = 65A
5 ^dv/_dt numbers reflect the limitations of the test circuit rather than the
device itself. I_S ≤ -I_D65A ^di/_dt ≤ 700A/µs V_R ≤ 200V T_J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.40
0.35
0.9
0.30
0.7
0.25
0.20
0.5
Note:
0.15
t1
0.3
0.10
t2
0.05
0.1
0.05
SINGLE PULSE
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION