APT20GF120BRDQ1 Datasheet, PDF (4/9 Pages) Advanced Power Technology – FAST IGBT & FRED

12
10
V_GE = 15V
8
6
4
2
V_CE = 800V
T_J = 25°C, or 125°C
R_G = 4.3Ω
L = 100µH
0
0 5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
40 _{RG = 4.3Ω, L = 100µH, VCE = 800V}
35
30
25
T_J = 25 or 125°C,V_GE = 15V
20
15
10
5
00
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
3500
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
3000
2500
T_J = 125°C
2000
1500
1000
500
T_J = 25°C
0 _{0 5 10 15 20 25 30 35}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
9000
8000
V_CE = 800V
V_GE = +15V
T_J = 125°C
7000
E_on2,30A
6000
5000
4000
3000
E_off,30A
2000
E_off,15A
E_on2,15A
1000 _Eon2,7.5A
0
E_off,7.5A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT20GF120B_SRDQ1(G)
180
160
140
120
V_GE =15V,T_J=125°C
100
V_GE =15V,T_J=25°C
80
60
40
20
V_CE = 800V
R_G = 4.3Ω
L = 100µH
0
0 5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120 _{RG = 4.3Ω, L = 100µH, VCE = 800V}
100
80
T_J = 125°C, V_GE = 15V
60
40
T_J = 25°C, V_GE = 15V
20
0 _{0 5 10 15 20 25 30 35}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2500
2000
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
T_J = 125°C
1500
1000
500
T_J = 25°C
0
5 10 15 20 25 30 35
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
3500
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
3000
2500 ^Eon2,^30A
2000
E_off,30A
1500
1000
E_on2,15A
E_off,15A
500
E_on2,7.5A
E_off,7.5A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature