APT20GF120BRDQ1 Datasheet, PDF (2/9 Pages) Advanced Power Technology – FAST IGBT & FRED

DYNAMIC CHARACTERISTICS
Symbol
C_ies
C_oes
C_res
V_GEP
Q_g
Q_ge
Q_gc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge ³
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
SSOA Switching Safe Operating Area
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
t_d(on)
t_r
t_d(off)
t_f
E_on1
E_on2
E_off
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ⁴
Turn-on Switching Energy (Diode) ⁵
Turn-off Switching Energy ⁶
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy ^{4 4}
Turn-on Switching Energy (Diode) ⁵⁵
Turn-off Switching Energy ⁶
Test Conditions
Capacitance
V_GE = 0V, V_CE = 25V
f = 1 MHz
Gate Charge
V_GE = 15V
V_CE = 600V
I_C = 15A
T_J = 150°C, R_G = 4.3Ω, V_GE =
15V, L = 100µH,V_CE = 1200V
Inductive Switching (25°C)
V_CC = 800V
V_GE = 15V
I_C = 15A
R_G = 4.3Ω
T_J = +25°C
Inductive Switching (125°C)
V_CC = 800V
V_GE = 15V
I_C = 15A
R_G = 4.3Ω
T_J = +125°C
APT20GF120B_SRDQ1(G)
MIN TYP MAX UNIT
1090
125
pF
65
10.5
V
100
12
nC
65
64
A
10
9
ns
120
95
895
850
µJ
840
10
9
ns
145
110
865
1480
µJ
1058
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R_θJC
R_θJC
W_T
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.63
1.18
°C/W
5.9
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I_ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E_on1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E_on2 is
loss. (See Figures 21, 22.)
6 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.