APT20GF120BRDQ1 Datasheet, PDF (3/9 Pages) Advanced Power Technology – FAST IGBT & FRED

TYPICAL PERFORMANCE CURVES
60
V_GE = 15V
T_J = -55°C
50
T_J = 25°C
40
30
T_J = 125°C
20
10
0
012 34 56 7
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
60
250µs PULSE
TEST<0.5 % DUTY
CYCLE
50
T_J = -55°C
40
30
20
T_J = 25°C
10
T_J = 125°C
00 _{2 4 6 8 10 12 14 16}
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I_C = 30A
4
3
I_C = 15A
2
I_C = 7.5A
1
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
APT20GF120B_SRDQ1(G)
80
15V
70
60
50
13V
40
12V
30
11V
20
10V
10
9V
0
8V _7V
0
5
10
15
20
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 15A
14 ^{TJ = 25°C}
V_CE = 240V
V_CE = 600V
12
10
V_CE = 960V
8
6
4
2
0
0 20 40 60 80 100 120
GATE CHARGE (nC)
FIGURE 4, Gate Charge
5
4
I_C = 30A
3
I_C = 15A
2
I_C = 7.5A
1
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
50
45
40
35
30
25
20
15
10
5
0-50 _{-25 0 25 50 75 100 125 150}
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature