APT200GN60JDQ4 Datasheet, PDF (4/9 Pages) Advanced Power Technology – IGBT

60
V_GE = 15V
50
40
30
20
10
V_CE = 400V
T_J = 25°C, or 125°C
R_G = 1.0Ω
L = 100µH
0
40 80 120 160 200 240 280 320
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
180
R_G = 1.0Ω, L = 100µH, V_CE = 400V
160
140
T_J = 25 or 125°C,V_GE = 15V
120
100
80
60
40
20
040 _{80 120 160 200 240 280 320}
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
35,000
30,000
V_CE = 400V
V_GE = +15V
R_G = 1.0Ω
25,000
T_J = 125°C
20,000
15,000
10,000
5,000
T_J = 25°C
0
40 80 120 160 200 240 280 320
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
70,000
60,000
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_off,300A
50,000
40,000 ^Eon2,^300A
E_off,200A
30,000
20,000
E_on2,200A
10,000
E_off,100A
E_on2,100A
0
0
5
10
15
20
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT200GN60JDQ4
800
700
600
500
V_GE =15V,T_J=125°C
400
V_GE =15V,T_J=25°C
300
200
100
V_CE = 400V
R_G = 1.0Ω
L = 100µH
0
40 80 120 160 200 240 280 320
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
200
150
T_J = 25°C, V_GE = 15V
100
50
T_J = 125°C, V_GE = 15V
040^RG
= 1.0Ω,
80
L = 100µH, V_CE = 400V
120 160 200 240
280
320
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
25,000
20,000
V_CE = 400V
V_GE = +15V
R_G = 1.0Ω
T_J = 125°C
15,000
10,000
5,000
T_J = 25°C
0
40 80 120 160 200 240 280 320
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
35,000
30,000
V_CE = 400V
V_GE = +15V
R_G = 1.0Ω
E_on2,300A
25,000 ^E_off,^300A
20,000
15,000
10,000
E_off,200A
E_on2,200A
5,000
E_on2,100A
0 ^Eoff,100A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature