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| APT200GN60JDQ4 Datasheet, PDF (1/9 Pages) Advanced Power Technology – IGBT | |||
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TYPICAL PERFORMANCE CURVES
®
APT620000GVN60JDQ4
APT200GN60JDQ4
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefï¬cient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simpliï¬es gate drive design and minimizes losses
⢠600V Field Stop
⢠Trench Gate: Low VCE(on)
⢠Easy Paralleling
⢠5µs Short Circuit Capability
⢠Intergrated Gate Resistor: Low EMI, High Reliability
⢠175°C Rated
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise speciï¬ed.
APT200GN60JDQ4
UNIT
600
Volts
±20
283
158
Amps
600
600A @600V
682
-55 to 175
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RGINT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
600
5
5.8 6.5
1.05 1.45 1.85
1.65
1.15
1.19
50
TBD
600
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
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