APT200GN60JDQ4 Datasheet, PDF (3/9 Pages) Advanced Power Technology – IGBT

TYPICAL PERFORMANCE CURVES
400
V_GE = 15V _{TJ = -55°C}
350
T_J = 25°C
300
T_J = 125°C
250
T_J = 175°C
200
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
400
250µs PULSE
350
TEST<0.5 % DUTY
CYCLE
T_J = -55°C
T_J = 25°C
300
T_J = 125°C
250
200
150
100
T_J = 175°C
50
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.0
T_J = 25°C.
I_C = 300A
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
2.0
I_C = 150A
1.5
1.0
I_C = 75A
0.5
0
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
400
15V
350
13V
APT200GN60JDQ4
300
12V
250
9V
200
150
8.5V
100
8V
50
7.5V
7V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 200A
14 ^{TJ = 25°C}
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0
3.0
200 400 600 800 1000 1200 1400
GATE CHARGE (nC)
FIGURE 4, Gate Charge
2.5
I_C = 300A
2.0
I_C = 150A
1.5
1.0
I_C = 75A
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150 175
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
400
350
300
250
200
150
100
50
0
-50 -25 0 25 50 75 100 125 150 175
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature