APT17N80BC3 Datasheet, PDF (4/5 Pages) Advanced Power Technology – Super Junction MOSFET

Typical Performance Curves
51
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
100µS
1
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 17A
10mS
12
VDS= 160V
8
VDS= 400V
VDS= 640V
4
0
0 20 40 60 80 100 120 140
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
90
t_d(off)
80
70
V_DD = 533V
60 ^R_G ^{= 5Ω}
50 ^{TJ = 125°C}
L = 100µH
40
30
20
10
t_d(on)
0
5
10
15
20
25
30
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
800
600
V_DD = 533V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_on
400
200
E_off
0
5
10
15
20
25
30
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
APT17N80BC3_SC3
Ciss
1000
Coss
100
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
10
TJ =+25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
50
V_DD = 533V
R_G = 5Ω
40 ^{TJ = 125°C}
L = 100µH
t_f
30
20
t_r
10
0
5
10
15
20
25
30
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
1000
E_off
800
600
E_on
400
V_DD = 533V
I_D = 17A
200
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE