APT17N80BC3 Datasheet, PDF (2/5 Pages) Advanced Power Technology – Super Junction MOSFET

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 0 to10V
V_DD = 400V
I_D = 17A @ 25°C
RESISTIVE SWITCHING
V_GS = 10V
V_DD = 400V
I_D = 17A @ 125°C
R_G = 4.7Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 533V, V_GS = 15V
I_D = 17A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 533V, V_GS = 15V
I_D = 17A, R_G = 5Ω
MIN
APT17N80BC3_SC3
TYP
2255
1045
55
90
11
45
25
15
70
MAX
82
UNIT
pF
nC
ns
6
9
245
140
425
µJ
170
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD Diode Forward Voltage ² (V_GS = 0V, I_S = -17A)
t _rr
Reverse Recovery Time (I_S = -17A, dl_S/dt = 100A/µs, V_R = 400V)
Q _rr Reverse Recovery Charge (I_S = -17A, dl_S/dt = 100A/µs, V_R = 400V)
dv_{/dt Peak Diode Recovery} dv_/dt 5
17
Amps
51
1
1.2 Volts
550
ns
15
µC
6
V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.60
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T_j = +25°C, L = 115.92mH, R_G = 25Ω, Peak I_L = 3.4A
5 I_S = -17A ^di/_dt = 100A/µs V_R = 480V T_J = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as P_AV=E_AR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10^-5
0.9
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION