APT17N80BC3 Datasheet, PDF (3/5 Pages) Advanced Power Technology – Super Junction MOSFET

Typical Performance Curves
Junction
temp (°C)
Power
(watts)
Case temperature (°C)
RC MODEL
0.259
0.341
0.0050
0.135
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
50
VDS> ID (ON) x RDS (ON)MAX.
45
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
TJ = -55°C
35
TJ = +25°C
30
25
20
15
10
5
TJ = +125°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
18
16
14
12
10
8
6
4
2
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3.0
I_D = 8.5A
V_GS = 10V
2.5
2.0
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
APT17N80BC3_SC3
50
45
VGS =15 & 10V
40
35
6.5V
30
25
6V
20
5.5V
15
10
5V
5
4.5V
4V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
NORMALIZED TO
V_GS = 10V @ 8.5A
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
5
10 15 20 25 30
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE