MRF4427 Datasheet, PDF (3/5 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

FUNCTIONAL
Symbol
Test Conditions
G
U max
MAG
|S₂₁|²
Maximum Unilateral Gain
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz
Maximum Available Gain
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz
Insertion Gain (calculated)
IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz
MRF4427, R1, R2
Value
Min.
Typ.
Max.
Unit
16
18
-
dB
18
20
-
dB
12
14
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 12 V, IC = 50 mA
f
(MHz)
50
100
200
500
750
1000
S11
|S11|
.672
.721
.743
.768
.775
.778
∠φ
-145
-163
-174
170
161
152
S21
|S21|
20.15
10.78
5.37
2.18
1.53
1.07
∠φ
112
96
85
63
48
36
S12
|S12|
.021
.026
.037
.070
.096
.122
∠φ
45
44
54
59
62
65
S22
|S22|
.447
∠φ
-59
.271
-67
.199
-72
.264
-86
.356
-98
.437
-109
MRF4427.PDF 4-24-03
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