MRF4427 Datasheet, PDF (2/5 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCBO
BVEBO
ICEO
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0 Vdc)
(on)
HFE
VCE(sat)
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 360 mAdc, VCE = 5 Vdc)
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mA)
DYNAMIC
Symbol
Test Conditions
Ftau
Cob
Current-Gain Bandwidth Product
(IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
MRF4427, R1, R2
Value
Min.
Typ.
Max.
Unit
20
-
-
Vdc
40
-
-
Vdc
2.0
-
-
Vdc
-
-
.02
mA
10
-
200
5.0
-
-
60
-
mVdc
Min.
-
-
Value
Typ.
1.3
-
Max.
-
3.4
Unit
GHz
GHz
MRF4427.PDF 4-24-03
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