MRF4427 Datasheet, PDF (1/5 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON

RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF4427, R1, R2
Features
• Low Cost SO-8 Plastic Surface Mount Package.
• S-Parameter Characterization
• Tape and Reel Packaging Options Available
• Low Voltage Version of MRF3866
• Maximum Available Gain – 20dB(typ) @ 200MHz
DESCRIPTION: Designed for general-purpose RF amplifier applications,
such as; pre-drivers, Oscillators, etc.
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Value
Unit
20
Vdc
40
Vdc
2.0
Vdc
400
mA
Thermal Data
P
D
T
stg
R_θJA
Total Device Dissipation @ TC = 25º C
Derate above 25º C
Storage Temperature
Thermal Resistance, Junction to Ambient
1.5
12.5
-65 to + 150
125
Watts
mW/ º C
ºC
º C/W
MRF4427.PDF 4-24-03
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