ARF449A Datasheet, PDF (3/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

ARF449A/449B
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
160
Class C
V_DD = 150V
f = 81.36 MHz
120
80
25
20
VGS=8, 10 & 15V
15
10
6.5V
6V
5.5V
5
5V
4.5V
0
1
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
14
12
Class C
V_DD = 150V
f = 81.36 MHz
10
40
8
0
0
2
4
6
8
10
P_IN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
6
0
40
80
120
160
P_OUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
0.8
0.1
0.05
0.01
0.005
0.001
10^-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Table 1 - Typical Class C Large Signal Input-Output Impedance
Freq. (MHz)
Z_in (Ω)
Z_OL (Ω)
2.0
13.5
27.0
40.0
65.0
80.0
100.0
23.00 - j 7.0
4.30 - j 9.1
1.00 - j 4.2
0.42 - j 1.7
0.35 + j 1.1
0.56 + j 2.5
0.90 + j 3.8
93.0 - j 10
63.0 - j 43
32.0 - j 43
17.5 - j 34
7.7 - j 22
5.1 - j 16
3.4 - j 12
Z_in - gate shunted by 25Ω
Z_OL - conjugate of optimum load impedance for 150W at 150V