ARF449A Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

D
ARF449A
G
S
TO-247
ARF449B
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V 90W 120MHz
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
• Specified 150 Volt, 81.36 MHz Characteristics: ^{• Low Cost Common Source RF Package.}
•
Output Power = 90 Watts.
• Very High Breakdown for Improved Ruggedness.
•
Gain = 13dB (Class C)
• Low Thermal Resistance.
•
Efficiency = 75%
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol Parameter
V_DSS
V_DGO
I_D
V_GS
P_D
R_θJC
T_J,T_STG
T_L
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T_C = 25°C
Gate-Source Voltage
Total Power Dissipation @ T_C = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: T_C = 25°C unless otherwise specified.
ARF449A/449B
UNIT
450
Volts
450
9
Amps
±30
Volts
165
Watts
0.76
°C/W
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250 µA)
450
V_DS(ON) On State Drain Voltage ¹ (I_D(ON) = 5A, V_GS = 10V)
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
g_fs
Forward Transconductance (V_DS = 25V, I_D = 5A)
3
V_GS(TH) Gate Threshold Voltage (V_DS = V_GS, I_D = 50mA)
2
4
25
250
±100
5.8
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
mhos
Volts