ARF449A Datasheet, PDF (2/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 150V
f = 1 MHz
V_GS = 15V
V_DD = 0.5 V_DSS
I_D = I_D[Cont.] @ 25°C
R_G = 1.6ý
ARF449A/449B
MIN TYP MAX UNIT
980 1200
87 120 pF
25
40
5
10
3.1
7
ns
15
25
3
7
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
G_{PS Common Source Amplifier Power Gain}
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 20:1
Test Conditions
f = 81.36 MHz
V_GS = 0V V_DD = 150V
P_out = 90W
MIN TYP MAX UNIT
12
13
dB
70
75
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%}
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
Class C
25
V_DD = 150V
P_out = 150W
20
15
10
5
0
30 45 60 75 90 105 120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
16
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
12
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
4
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
3000
1000
500
100
50
Ciss
Coss
Crss
10
1
5 10
50
150
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
50
OPERATION HERE
LIMITED BY R_DS (ON)
10
5
10µS
100µS
1mS
10mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
100mS
DC
.1
1
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area