2N6304 Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N6304
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
G
U max
Maximum Unilateral Gain (1) IC = 14 mAdc, VCE = 10
Vdc, f = 500 MHz
-
14
-
dB
MAG
Maximum Available Gain
IC = 14 mAdc, VCE = 10
Vdc, f = 500 MHz
-
13
-
dB
|S₂₁|²
Insertion Gain
IC = 14 mAdc, VCE = 10
Vdc, f = 500 MHz
9
10
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 14 mA
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
|S11|
0.430
0.269
0.212
0.192
0.164
0.153
0.170
0.146
0.226
0.075
∠φ
-46
-58
-61
-69
-76
-78
-87
-94
-119
152
S21
|S21|
13.18
8.27
5.35
3.85
3.34
2.92
2.34
1.85
2.66
1.26
∠φ
119
97
86
77
77
66
58
55
56
36
S12
|S12|
0.013
0.019
0.024
0.032
0.036
0.042
0.042
0.052
0.065
0.062
∠φ
61
50
55
50
45
42
40
40
25
13
S22
|S22|
0.875
∠φ
-25
0.773
-38
0.749
-50
0.735
-63
0.72
-76
0.725
-89
0.729
-104
0.713
-120
0.757
-136
0.763
-153
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